Effects of radiation and annealing of n-channel IGFETs with implications for space applications

被引：0

作者：

机构：

[1] Bhattacharya, P.K.

[2] Andhole, Sunil K.

来源：

Bhattacharya, P.K. | 1600年 / Publ by Taylor & Francis, Bristol, PA, United States卷 / 76期

关键词：

MOSFET devices;

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