CHALCOGENIDE SWITCHING DEVICES.

被引:0
|
作者
Bunton, G.V.
Quilliam, R.M.
机构
来源
Marconi Review | 1972年 / 35卷 / 184 First Q期
关键词
SEMICONDUCTING GLASS;
D O I
暂无
中图分类号
学科分类号
摘要
The class of non crystalline materials is reviewed and the stability of the chalcogenide glasses is discussed. The term chalcogenide indicates that at least one component of the glass is from group VIB of the periodic table. The fabrication is described and the performance of monostable threshold switching devices and bistable memory switching devices is dealt with. It is established that the threshold switching action is not primarily a thermal runaway process although thermal effects are necessarily involved in the filamentary conduction path after switching has occurred. Various electronic models of the threshold switching action are considered. A number of applications for both threshold and memory devices is presented.
引用
下载
收藏
页码:24 / 41
相关论文
共 50 条
  • [11] SWITCHING MECHANISMS IN AMORPHOUS-CHALCOGENIDE MEMORY DEVICES
    STEVENTON, AG
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 21 (03) : 319 - 329
  • [12] THERMAL MEASUREMENTS ON CHALCOGENIDE GLASS THRESHOLD SWITCHING DEVICES
    TROLTZSCH, J
    DIPPMANN, C
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 67 (02): : 527 - 531
  • [13] Chalcogenide glasses for use in photonic switching devices: A detailed analysis
    Dixit, N
    Vijaya, R
    PHOTONICS 2000: INTERNATIONAL CONFERENCE ON FIBER OPTICS AND PHOTONICS, 2001, 4417 : 477 - 482
  • [14] MECHANISM OF THRESHOLD AND MEMORY SWITCHING IN GLASSY CHALCOGENIDE ALLOY DEVICES
    BOSNELL, JR
    THOMAS, CB
    PHILOSOPHICAL MAGAZINE, 1973, 27 (03): : 665 - 681
  • [15] Mechanism of threshold switching in chalcogenide phase change memory devices
    Karpov, I.
    Savransky, S.
    Karpov, V.
    2007 22ND IEEE NON-VOLATILE SEMICONDUCTOR MEMORY WORKSHOP, 2007, : 56 - +
  • [16] Why are chalcogenide glasses the materials of choice for Ovonic switching devices?
    Fritzsche, Hellmut
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2007, 68 (5-6) : 878 - 882
  • [17] Structural changes during the switching transition of chalcogenide selector devices
    Guo, Yuzheng
    Li, Huanglong
    Zhang, Wei
    Robertson, John
    APPLIED PHYSICS LETTERS, 2019, 115 (16)
  • [18] Unsymmetrical switching in the visible and NIR of spray coatable polymer electrochromic devices.
    Dyer, AL
    Argun, AA
    Reeves, BD
    Grenier, CRG
    Reynolds, JR
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2005, 229 : U966 - U966
  • [19] NEW METHOD FOR SWITCHING HIGH POWER LOADS USING SEMICONDUCTOR DEVICES.
    Gorbatyuk, A.V.
    Grekhov, I.V.
    Korotkov, S.V.
    Kostina, L.S.
    Yakovchuk, N.S.
    Soviet physics. Technical physics, 1982, 27 (07): : 832 - 835
  • [20] OPTOCOUPLING DEVICES.
    Dance, Brian
    New Electronics, 1979, 12 (18): : 38 - 52