DEFECT LEVELS IN THERMALLY-QUENCHED SILICON CRYSTALS.

被引：0
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作者：
Nakashima, Kenshiro [1 ]
机构：
[1] Nagoya Inst of Technology, Dep of, Electrical Engineering, Nagoya, Jpn, Nagoya Inst of Technology, Dep of Electrical Engineering, Nagoya, Jpn
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1985年 / 24卷 / 08期
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摘要：
19
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页码：1018 / 1021
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