Surface passivation of In0.53Ga0.47As ridge quantum wires using silicon interface control layers

被引:0
|
作者
Fujikura, Hajime
Kodama, Satoshi
Hashizume, Tamotsu
Hasegawa, Hideki
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Surface passivation of In0.53Ga0.47As ridge quantum wires using silicon interface control layers
    Fujikura, H
    Kodama, S
    Hashizume, T
    Hasegawa, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (04): : 2888 - 2894
  • [2] Surface passivation of InP-based In0.53Ga0.47As quantum wires using silicon interlayer-based passivation technique
    Fujikura, H
    Kodama, S
    Hasegawa, H
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 323 - 326
  • [3] Energy relaxation in In0.53Ga0.47As/InP quantum wires
    Kieseling, F
    Braun, W
    Ils, P
    Wang, KH
    Forchel, A
    HOT CARRIERS IN SEMICONDUCTORS, 1996, : 309 - 313
  • [4] Implantation and Diffusion of Silicon Marker Layers in In0.53Ga0.47As
    Aldridge, Henry, Jr.
    Lind, Aaron G.
    Bomberger, Cory C.
    Puzyrev, Yevgeniy
    Hatem, Christopher
    Gwilliam, Russell M.
    Zide, Joshua M. O.
    Pantelides, Sokrates T.
    Law, Mark E.
    Jones, Kevin S.
    JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (08) : 4282 - 4287
  • [5] Implantation and Diffusion of Silicon Marker Layers in In0.53Ga0.47As
    Henry Aldridge
    Aaron G. Lind
    Cory C. Bomberger
    Yevgeniy Puzyrev
    Christopher Hatem
    Russell M. Gwilliam
    Joshua M. O. Zide
    Sokrates T. Pantelides
    Mark E. Law
    Kevin S. Jones
    Journal of Electronic Materials, 2016, 45 : 4282 - 4287
  • [6] IN0.53GA0.47AS/INP QUANTUM WIRES - FABRICATION AND MAGNETOTRANSPORT STUDIES
    MENSCHIG, A
    ROOS, B
    GERMANN, R
    FORCHEL, A
    PRESSEL, K
    HEURING, W
    GRUTZMACHER, D
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06): : 1353 - 1356
  • [7] A crystalline oxide passivation on In0.53Ga0.47As (100)
    Qin, Xiaoye
    Wang, Wei-E
    Droopad, Ravi
    Rodder, Mark S.
    Wallace, Robert M.
    JOURNAL OF APPLIED PHYSICS, 2017, 121 (12)
  • [8] MAGNETOTRANSPORT IN NARROW IN0.53GA0.47AS/INP WIRES
    MENSCHIG, A
    FORCHEL, A
    ROOS, B
    GERMANN, R
    PRESSEL, K
    HEURING, W
    GRUTZMACHER, D
    APPLIED PHYSICS LETTERS, 1990, 57 (17) : 1757 - 1759
  • [9] Many body effects in the luminescence of In0.53Ga0.47As/InP quantum wires
    Wang, KH
    Bayer, M
    Ils, P
    Forchel, A
    Benner, S
    Haug, H
    PagnodRossiaux, P
    Goldstein, L
    SOLID-STATE ELECTRONICS, 1996, 40 (1-8) : 287 - 289
  • [10] Investigation of interface abruptness in strained InAs/In0.53Ga0.47As quantum wells
    Bruni, MR
    Gambacorti, N
    Kaciulis, S
    Mattogno, G
    Simeone, MG
    Viticoli, S
    ADVANCES IN CRYSTAL GROWTH, 1996, 203 : 231 - 235