Highly p-type carbon-doped InGaAs grown by atmospheric pressure organometallic vapor-phase epitaxy

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Univ of Utah, Salt Lake City, United States [1 ]
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J Cryst Growth | / 1-2卷 / 47-55期
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Number:; DAAH04-94-G-0231; Acronym:; ARO; Sponsor: Army Research Office; -;
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