MODELING MOS TRANSISTORS IN THE AVALANCHE-BREAKDOWN REGIME.

被引：0

作者：

Schuetz, A. ^{[1
]}

Selberherr, S. ^{[1
]}

Poetzl, H.W. ^{[1
]}

机构：

[1] Siemens Research Lab, Munich, West Ger, Siemens Research Lab, Munich, West Ger

来源：

Transactions of the Society for Computer Simulation | 1984年 / 1卷 / 01期

关键词：

IONIZATION - Mathematical Models - TRANSISTORS - Computer Simulation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Impact ionization has a very disadvantageous effect for many semiconductor devices because it may cause avalanche breakdown and destruction of the device. For an MOS circuit design an understanding of avalanche-induced breakdown effects is desirable when the dimension of transistors are reduced. This requires an accurate solution of the semiconductor equation and a good description of the ionization rates. Such a model is presented here and applied to calculate the electronic potential and carrier density distribution in MOS transistors operating near breakdown.

引用

页码：1 / 14

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