MEMORY SWITCHING IN SPUTTERED HYDROGENATED AMORPHOUS SILICON (a-Si:H).

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作者：
Gangopadhyay, Shubhra [1 ]
Geiger, Juergen [1 ]
Schroeder, Bernd [1 ]
Ruebel, Herbert [1 ]
Iselborn, Stefan [1 ]
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[1] Univ Kaiserslautern, Fachbereich, Physik, Kaiserslautern, West Ger, Univ Kaiserslautern, Fachbereich Physik, Kaiserslautern, West Ger
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| 1600年 / 24期
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