GaAs and silicon manufacturers forming alliances for silicon-germanium technology in RFICs

被引：0
|
作者：
机构：
来源：
III-Vs Review | 2001年 / 14卷 / 05期
关键词：
D O I：
10.1016/s0961-1290(01)80213-1
中图分类号：
学科分类号：
摘要：
引用
下载
收藏
相关论文
共 50 条
  • [31] On the role of germanium in porous silicon-germanium luminescence
    Amato, G
    Rossi, AM
    Boarino, L
    Brunetto, N
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1997, 76 (03): : 395 - 403
  • [32] Silicon-germanium nanostructures with high germanium concentration
    Sadofyev Y.G.
    Martovitsky V.P.
    Bazalevsky M.A.
    Bulletin of the Russian Academy of Sciences: Physics, 2014, 78 (01) : 29 - 33
  • [33] EPITAXIAL SILICON-GERMANIUM ALLOY FILMS ON SILICON SUBSTRATES
    MILLER, KJ
    GRIECO, MJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (01) : 70 - 71
  • [34] Diffusion of boron in silicon and silicon-germanium in the presence of carbon
    Karunaratne, MSA
    Bonar, JM
    Zhang, J
    Ashburn, P
    Willoughby, AIW
    DIFFUSION IN MATERIALS: DIMAT 2004, PTS 1 AND 2, 2005, 237-240 : 998 - 1003
  • [35] PROPERTIES OF AMORPHOUS SILICON/AMORPHOUS SILICON-GERMANIUM MULTILAYERS
    CONDE, JP
    CHU, V
    SHEN, DS
    WAGNER, S
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (03) : 1638 - 1655
  • [36] Polycrystalline silicon and silicon-germanium films for advanced microelectronics
    Lahiri, SK
    Das, S
    Umapathi, B
    Kal, S
    IETE JOURNAL OF RESEARCH, 1997, 43 (2-3) : 193 - 205
  • [37] REACTION OF TITANIUM WITH GERMANIUM AND SILICON-GERMANIUM ALLOYS
    THOMAS, O
    DELAGE, S
    DHEURLE, FM
    SCILLA, G
    APPLIED PHYSICS LETTERS, 1989, 54 (03) : 228 - 230
  • [38] Ambient erbium luminescence in silicon and silicon-germanium films
    Abedrabbo, Sufian
    Fiory, Anthony
    EMERGING MATERIALS RESEARCH, 2012, 1 (01) : 17 - 24
  • [39] Strained silicon on ultrathin silicon-germanium virtual substrates
    Lyutovich, K
    Kasper, E
    Oehme, M
    Werner, J
    Perova, T
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, 2005, 108-109 : 463 - 468
  • [40] YIELD POINTS OF SILICON AND MIXED SILICON-GERMANIUM CRYSTALS
    SIETHOFF, H
    MATERIALS SCIENCE AND ENGINEERING, 1969, 4 (2-3): : 155 - &
12345