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- [21] New partial SOI LDMOS device with high power-added efficiency for 2 GHz RF power amplifier applications IECON 2000: 26TH ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, VOLS 1-4: 21ST CENTURY TECHNOLOGIES AND INDUSTRIAL OPPORTUNITIES, 2000, : 1001 - 1006
- [23] A 12-GHZ, 12-W HJFET AMPLIFIER WITH 48-PERCENT PEAK POWER-ADDED EFFICIENCY IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1995, 5 (11): : 402 - 404
- [25] W-band InP-based Resonant Tunnelling Diode Oscillator with Milliwatt Output Power 26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2014,
- [28] 100 MHz-8 GHz Linear Distributed GaN MMIC Power Amplifier with Improved Power-added Efficiency 2017 IEEE TOPICAL CONFERENCE ON RF/MICROWAVE POWER AMPLIFIERS FOR RADIO AND WIRELESS APPLICATIONS (PAWR), 2017, : 40 - 43
- [29] 140 GHz power amplifier based on 0.5 μm composite collector InP DHBT IEICE ELECTRONICS EXPRESS, 2017, 14 (08):
- [30] 75 GHz InP DHBT Power Amplifier Based on Two-Stacked Transistors 2017 IEEE ASIA PACIFIC MICROWAVE CONFERENCE (APMC), 2017, : 314 - 317