In-situ studies of growth, defects and reconstruction at epitaxial silicide/silicon interfaces

被引:0
|
作者
机构
来源
| 1600年 / Publ by Elsevier Science Publishers B.V., Amsterdam, Neth卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] EPITAXIAL-GROWTH OF NICKEL SILICIDE NISI2 ON SILICON
    TU, KN
    ALESSANDRINI, EI
    CHU, WK
    KRAUTLE, H
    MAYER, JW
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, : 669 - 672
  • [22] Epitaxial Insertion of Gold Silicide Nanodisks During the Growth of Silicon Nanowires
    Um, Han-Don
    Jee, Sang-Won
    Park, Kwang-Tae
    Jung, Jin-Young
    Guo, Zhongyi
    Lee, Jung-Ho
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (07) : 6118 - 6121
  • [23] In-situ strain control in epitaxial silicon carbide compound semiconductor
    Jazizadeh, Behzad
    Myronov, Maksym
    SCIENTIFIC REPORTS, 2024, 14 (01):
  • [24] Characterization of sidewall defects in selective epitaxial growth of silicon
    Bashir, R.
    Neudeck, G.W.
    Haw, Y.
    Kvam, E.P.
    Denton, J.P.
    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1995, 13 (03): : 923 - 927
  • [25] IN-SITU INVESTIGATION OF AMORPHOUS-SILICON SILICON DIOXIDE INTERFACES BY INFRARED ELLIPSOMETRY
    OSSIKOVSKI, R
    SHIRAI, H
    DREVILLON, B
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1993, 166 : 825 - 828
  • [26] IN-SITU INVESTIGATION OF AMORPHOUS SILICON-SILICON DIOXIDE INTERFACES BY INFRARED ELLIPSOMETRY
    OSSIKOVSKI, R
    SHIRAI, H
    DREVILLON, B
    APPLIED PHYSICS LETTERS, 1994, 64 (14) : 1815 - 1817
  • [27] Epitaxial erbium silicide films on (100) silicon: growth, structure and electrical properties
    Travlos, A
    Salamouras, N
    Flouda, E
    APPLIED SURFACE SCIENCE, 1997, 120 (3-4) : 355 - 364
  • [28] Growth, structure and electrical properties of epitaxial thulium silicide thin films on silicon
    Travlos, A
    Salamouras, N
    Boukos, N
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (03) : 1217 - 1221
  • [29] Dimer reconstruction at metal-silicide/silicon interfaces: A first-principles study
    Yu, BD
    Miyamoto, Y
    Sugino, O
    Sakai, A
    Sasaki, T
    Ohno, T
    ADVANCED INTERCONNECTS AND CONTACTS, 1999, 564 : 103 - 108
  • [30] IN SITU ETCHING OF SILICON SUBSTRATES PRIOR TO EPITAXIAL GROWTH
    CHU, TL
    GRUBER, GA
    STICKLER, R
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (2P1) : 156 - &