Enhanced penetration of oxygen along the grain boundary in semiconducting barium titanate

被引：0

作者：

机构：

[1] Hasegawa, Akira

[2] Fujitsu, Satoru

[3] Koumoto, Kunihito

[4] Yanagida, Hiroaki

来源：

Hasegawa, Akira | 1600年 / 30期

关键词：

Semiconductor Materials;

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暂无

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引用

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[21] RELAXIONAL POLARIZATION IN SEMICONDUCTING BARIUM TITANATE
BOIS, GV
MIKHAILO.NA
SOVIET PHYSICS SOLID STATE,USSR, 1968, 10 (02): : 495 - &
[22] SOME ASPECTS OF SEMICONDUCTING BARIUM TITANATE
JONKER, GH
SOLID-STATE ELECTRONICS, 1964, 7 (12) : 895 - 903
[23] PROPERTIES OF BLACK SEMICONDUCTING BARIUM TITANATE
GOSWAMI, AK
AMERICAN CERAMIC SOCIETY BULLETIN, 1971, 50 (04): : 390 - &
[24] THERMOELECRIC EFFECT IN SEMICONDUCTING BARIUM TITANATE
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JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (07) : 883 - +
[25] THE HALL EFFECT IN SEMICONDUCTING BARIUM TITANATE
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APPLIED PHYSICS LETTERS, 1962, 1 (03) : 69 - 71
[26] SEMICONDUCTING PROPERTIES OF BARIUM-TITANATE AND IRON SUBSTITUTED BARIUM-TITANATE
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WOLD, A
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[27] Grain boundary structure in TiO2 excess barium titanate
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[28] Grain boundary structure in TiO2-excess barium titanate
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[29] Grain boundary reoxidation of donor-doped barium titanate ceramics
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Pu, Yongping
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JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2006, 26 (14) : 2899 - 2907
[30] Study of grain boundary tunneling in barium-titanate ceramic films
Wong, H
Han, PG
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JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S196 - S199

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