Modelling of SOI MOS transistors

被引:0
|
作者
Jurczak, M. [1 ]
Jakubowski, A. [1 ]
机构
[1] Warsaw Univ of Technology, Warszawa, Poland
来源
Electron Technology (Warsaw) | 1999年 / 32卷 / 01期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:21 / 28
相关论文
共 50 条
  • [1] Radiation dose effects in trigate SOI MOS transistors
    Colinge, J. P.
    Orozco, A.
    Rudee, J.
    Xiong, Weize
    Cleavelin, C. Rinn
    Schulz, T.
    Schruefer, K.
    Knoblinger, G.
    Patruno, P.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) : 3237 - 3241
  • [2] Accurate effective mobility extraction in SOI MOS transistors
    Thomas, S. M.
    Whall, T. E.
    Parker, E. H. C.
    Leadley, D. R.
    Lander, R. J. P.
    Vellianitis, G.
    Watling, J. R.
    ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON, 2009, : 31 - +
  • [3] Standard MOS Diodes Composed by SOI UTBB Transistors
    Costa, Fernando J.
    Trevisoli, Renan
    Capovilla, Carlos Eduardo
    Doria, Rodrigo T.
    2022 36TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY (SBMICRO 2022), 2022,
  • [4] Device Modelling of Bendable MOS Transistors
    Heidari, Hadi
    Navaraj, William T.
    Toldi, Gergely
    Dahiya, Ravinder
    2016 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2016, : 1358 - 1361
  • [5] Self-cascode SOI versus graded-channel SOI MOS transistors
    Sanz, M. T.
    Celma, S.
    Calvo, B.
    Flandre, D.
    IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 2006, 153 (05): : 461 - 465
  • [6] SOI bipolar-MOS merged transistors for BiCMOS application
    Centre for Microelectronic Systems, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502, Japan
    Electron. Lett., 14 (1203-1204):
  • [7] SOI bipolar-MOS merged transistors for BICMOS application
    Zheng, YS
    Asano, T
    ELECTRONICS LETTERS, 1999, 35 (14) : 1203 - 1204
  • [8] Assessment of RF compact modelling of FD SOI transistors
    Vanbrabant, Martin
    Nyssens, Lucas
    Kilchytska, Valeriya
    Raskin, Jean-Pierre
    2021 IEEE LATIN AMERICA ELECTRON DEVICES CONFERENCE (LAEDC), 2021,
  • [9] MODELLING OF SHORT-CHAMMEL MOS TRANSISTORS
    ARMSTRONG, GA
    MAGOWAN, JA
    ELECTRONICS LETTERS, 1970, 6 (10) : 313 - +
  • [10] Designing MOS/SOI transistors for high frequency and low voltage applications
    Ferlet-Cavrois, V.
    Bracale, A.
    Marcandella, C.
    Musseau, O.
    Pelloie, J.L.
    Raynaud, C.
    Faynot, O.
    Microelectronic Engineering, 1999, 48 (01): : 351 - 354