Effect of composite collector design on the breakdown behavior of InGaP/GaAs double heterojunction bipolar transistor

被引：0
|
作者：
机构：
[1] Lew, K.L.
[2] Yoon, S.F.
来源：
Lew, K.L. | 1600年 / American Institute of Physics Inc.卷 / 93期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
下载
收藏
相关论文
共 50 条
  • [21] Collector-up InGaP/GaAs double heterojunction bipolar transistors with high f(max)
    Henkel, A
    Delage, SL
    diFortePoisson, MA
    Chartier, E
    Blanck, H
    Hartnagel, HL
    ELECTRONICS LETTERS, 1997, 33 (07) : 634 - 636
  • [22] Breakdown behaviour in wide bandgap collector GaInP/GaAs double heterojunction bipolar transistors
    Flitcroft, RM
    Houston, PA
    Lye, BC
    Button, CC
    David, JPR
    EDMO - 1997 WORKSHOP ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 1997, : 273 - 278
  • [23] InGaP/GaAs heterojunction bipolar transistor and RF power amplifier reliability
    Liu, Xiang
    Yuan, Jiann S.
    Liou, Juin J.
    MICROELECTRONICS RELIABILITY, 2008, 48 (8-9) : 1212 - 1215
  • [24] Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior
    Ahmari, DA
    Raghavan, G
    Hartmann, QJ
    Hattendorf, ML
    Feng, M
    Stillman, GE
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (04) : 634 - 640
  • [25] A COLLECTOR DESIGN STUDY FOR GAAS/GE/GAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS
    STRITE, S
    UNLU, MS
    DEMIREL, AL
    MUI, DSL
    MORKOC, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 675 - 682
  • [26] Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base
    Chen, YW
    Hsu, WC
    Hsu, RT
    Wu, YH
    Chen, YJ
    Lin, YS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (06): : 2555 - 2557
  • [27] Investigation of an InGaP/GaAs resonant-tunneling heterojunction bipolar transistor
    Pan, HJ
    Feng, SC
    Wang, WC
    Lin, KW
    Yu, KH
    Wu, CZ
    Laih, LW
    Liu, WC
    SOLID-STATE ELECTRONICS, 2001, 45 (03) : 489 - 494
  • [28] Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor
    Chen, JY
    Wang, WC
    Pan, HJ
    Feng, SC
    Yu, KH
    Cheng, SY
    Liu, WC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (02): : 751 - 756
  • [29] Base-collector leakage currents in circular geometry InGaP/GaAs double heterojunction bipolar transistors
    Loga, R
    Vilches, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (03) : 408 - 412
  • [30] Design consideration of emitter-base junction structure for InGaP/GaAs heterojunction bipolar transistor
    Natl Cheng-Kung Univ, Tainan, Taiwan
    Conf Optoelectron Microelectron Mater Dev Proc COMMAD, (246-248):
12345