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- [32] REFLECTANCE ANISOTROPY AND THE ORDERING MECHANISM IN GAINP AT HIGH GROWTH TEMPERATURES COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 201 - 206
- [33] Effect on Ordering of the Growth of GaInP Layers on (111)-GaAs Faces Journal of Electronic Materials, 2010, 39 : 671 - 676
- [34] Influence of substrate growth temperature on the Cu-Pt type ordering in lattice-matched GaInP/GaAs heterostructures EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 27 (1-3): : 333 - 336
- [39] MBE GROWTH OF SI-DOPED GAAS ON (111)A SUBSTRATES - EFFECTS OF SUBSTRATE MISORIENTATION AND GROWTH-MECHANISM FIRST INTERNATIONAL MEETING ON ADVANCED PROCESSING AND CHARACTERIZATION TECHNOLOGIES: FABRICATION AND CHARACTERIZATION OF SEMICONDUCTOR OPTOELECTRONIC DEVICES AND INTEGRATED CIRCUITS, VOLS 1 AND 2, 1989, : B1 - B4