EFFECT OF CARRIER CONCENTRATION IN THE SEMICONDUCTOR ON THE VOLTAGE-CURRENT CHARACTERISTICS OF SCHOTTKY BARRIER DIODES AT LOW TEMPERATURES.

被引：0

|

作者：

Bozhkov, V.G.

Malakhovskii, O.Yu.

机构：

来源：

| 1600年 / 29期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

收藏

相关论文

共 50 条

[21] Temperature Dependence Of Current-Voltage Characteristics Of Pt/InN Schottky Barrier Diodes
Rangel-Kuoppa, Victor-Tapio
Suihkonen, Sami
Sopanen, Markku
Lipsanen, Harri
PHYSICS OF SEMICONDUCTORS, 2009, 1199 : 53 - 54
[22] The effect of series resistance on capacitance-voltage characteristics of Schottky barrier diodes
Sahin, B
Çetin, H
Ayyildiz, E
SOLID STATE COMMUNICATIONS, 2005, 135 (08) : 490 - 495
[23] FORWARD VOLTAGE-CURRENT CHARACTERISTICS OF METAL-SILICON SCHOTTKY BARRIERS
PADVOANI, FA
JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 891 - &
[24] Minority carrier injection and current-voltage characteristics of Schottky diodes at high injection level
Mnatsakanov, Tigran T.
Levinshtein, Michael E.
Tandoev, Alexey G.
Yurkov, Sergey N.
Palmour, John W.
SOLID-STATE ELECTRONICS, 2016, 121 : 41 - 46
[25] VOLTAGE-CURRENT CHARACTERISTICS OF METAL-DIELECTRIC-SEMICONDUCTOR SYSTEM
GAMAN, VI
BAZAROV, VD
REZNIKOV, VA
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1969, (02): : 15 - &
[26] Current-voltage characteristics of Schottky barrier diodes with dynamic interfacial defect state occupancy
Darling, RB
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (07) : 1153 - 1160
[27] NUMERICAL-SIMULATION OF THE CURRENT-VOLTAGE CHARACTERISTICS OF HETEROEPITAXIAL SCHOTTKY-BARRIER DIODES
BHAPKAR, UV
MATTAUCH, RJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (06) : 1038 - 1046
[28] Terahertz Current and Voltage Noise in Nanometric Schottky-barrier Diodes
Mahi, A. H.
Mahi, F. Z.
Varani, L.
PIERS 2011 MARRAKESH: PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM, 2011, : 710 - 713
[29] SCHOTTKY-BARRIER CHARACTERISTICS AT LOW-TEMPERATURES
CHANDRA, MM
PRASAD, M
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 77 (02): : 715 - 719
[30] NEW WAY OF PLOTTING CURRENT VOLTAGE CHARACTERISTICS OF SCHOTTKY DIODES
MISSOUS, M
RHODERICK, EH
ELECTRONICS LETTERS, 1986, 22 (09) : 477 - 478

← 1 2 3 4 5 →