Facet evolution of Al0.5Ga0.5As/GaAs multilayers grown on mesa-patterned GaAs substrate

被引：0
|
作者：
Kim, Hyo Jin [2 ]
Park, Young K. [1 ]
Kim, Seong-Il [1 ]
Kim, Eun Kyu [1 ]
Kim, Tae Whan [2 ]
机构：
[1] Semiconductor Materials Laboratory, Korea Inst. of Sci. and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, Korea, Republic of
[2] Department of Physics, Kwangwoon University, 447-1, Wolgye-dong, Nowon-ku, Seoul 139-701, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 9 A期
关键词：
Chemical bonds - Computational methods - Crystal orientation - Film growth - Mathematical models - Metallorganic chemical vapor deposition - Morphology - Multilayers - Semiconducting aluminum compounds - Semiconducting gallium arsenide - Semiconductor growth - Substrates;
D O I：
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学科分类号：
摘要：
Facet evolution of (511)A of Al0.5Ga0.5As/GaAs multilayers grown on a mesa-patterned GaAs substrate by metalorganic chemical vapor deposition has been investigated. The time development equation of the growth morphology together with the bond density model was introduced to analyze the facet evolution. The facets at the concave surface on the mesa-patterned GaAs substrate during the growth process were evolved toward the growth surface with the highest growth rate. The facets having the highest growth rate were analyzed as a function of the surface migration length. The calculated results show that the highest growth rate in the surface plane of (511)A occurred at the concave surface on a mesa-patterned GaAs substrate with a surface migration length of larger than 1.5 μm.
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页码：4969 / 4972
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