A two-temperature technique for PECVD deposition of silicon dioxide

被引：0
|
作者：
Herman, J.S. [1 ]
Terry Jr., Fred L. [1 ]
机构：
[1] Dept of Electr Eng & Comput Sci,, Univ of Michigan, Ann Arbor, MI, USA
来源：
Electron device letters | 1991年 / 12卷 / 05期
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摘要：
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页码：236 / 237
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