Restoration Model of Bipolar Transistor.

被引：0
|
作者：
Baranowski, Jerzy
机构：
来源：
Elektronika Warszawa | 1986年 / 27卷 / 10-11期
关键词：
INTEGRATED CIRCUITS - Mathematical Models - SEMICONDUCTOR MATERIALS - Charge Carriers;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A model is presented resulting from application of the charge selection method (restorations method) for modeling of properties of a bipolar junction transistor. In this model, taken into account are Kirk's, Webster's and Early's effects as well as finite values of injection factors of carriers. A circuit diagram of the n-p-n transistor model as well as examples of simulation characteristics of this transistor are given.
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页码：12 / 16
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