Microstructural evolution of GaSb self-assembled islands grown by metalorganic chemical vapor deposition

被引：0
|
作者：
机构：
来源：
Appl Phys Lett | / 9卷 / 1233期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] High-density InP self-assembled quantum dots embedded in In0.5Al0.5P grown by metalorganic chemical vapor deposition
    Ryou, JH
    Dupuis, RD
    Mathes, DT
    Hull, R
    Reddy, CV
    Narayanamurti, V
    APPLIED PHYSICS LETTERS, 2001, 78 (22) : 3526 - 3528
  • [42] Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition
    Li Li-Gong
    Liu Shu-Man
    Luo Shuai
    Yang Tao
    Wang Li-Jun
    Liu Feng-Qi
    Ye Xiao-Ling
    Xu Bo
    Wang Zhan-Guo
    CHINESE PHYSICS LETTERS, 2011, 28 (11)
  • [43] Photoluminescence of self-assembled Ge dots grown by ultra-high-vacuum chemical vapor deposition
    Boucaud, P
    Le Thanh, V
    Sauvage, S
    Debarre, D
    Bouchier, D
    Lourtioz, JM
    THIN SOLID FILMS, 1998, 336 (1-2) : 240 - 243
  • [44] Tuning of electronic properties of chemical vapor deposition grown graphene via self-assembled monolayer doping
    Singh, Anand Kumar
    Chaudhary, Vivek
    Singh, Arun Kumar
    Sinha, S. R. P.
    MATERIALS TODAY-PROCEEDINGS, 2021, 46 : 2919 - 2924
  • [45] InAs/GaSb type-II superlattice structures and photodiodes grown by metalorganic chemical vapor deposition
    Huang, Yong
    Ryou, Jae-Hyun
    Dupuis, Russell D.
    Petschke, Adam
    Mandl, Martin
    Chuang, Shun-Lien
    APPLIED PHYSICS LETTERS, 2010, 96 (25)
  • [46] Photoluminescence of self-assembled Ge dots grown by ultra-high-vacuum chemical vapor deposition
    Boucaud, P
    Le Thanh, V
    Sauvage, S
    Debarre, D
    Bouchier, D
    Lourtioz, JM
    THIN FILMS EPITAXIAL GROWTH AND NANOSTRUCTURES, 1999, 79 : 240 - 243
  • [47] Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor deposition
    Patriarche, G
    Sagnes, I
    Boucaud, P
    Le Thanh, V
    Bouchier, D
    Hernandez, C
    Campidelli, Y
    Bensahel, D
    APPLIED PHYSICS LETTERS, 2000, 77 (03) : 370 - 372
  • [48] INAS-GASB HOT-ELECTRON TRANSISTORS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    TAIRA, K
    NAKAMURA, F
    HASE, I
    KAWAI, H
    MORI, Y
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 952 - 955
  • [49] Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates by metalorganic chemical vapor deposition
    Yi, SS
    Hansen, DM
    Inoki, CK
    Harris, DL
    Kuan, TS
    Kuech, TF
    APPLIED PHYSICS LETTERS, 2000, 77 (06) : 842 - 844
  • [50] Metalorganic chemical vapor deposition and spontaneous emission of self-assembled InAs quantum dots in open space and in a planar microcavity
    Zhang, XH
    Dong, JR
    Chua, ST
    Zhang, J
    Yong, A
    JOURNAL OF CRYSTAL GROWTH, 2004, 268 (3-4) : 420 - 425
12345