Selective tungsten chemical vapor deposition with high deposition rate for ULSI application

被引:0
|
作者
Suzuki, Hiroshi [1 ]
Maeda, Yuuji [1 ]
Morita, Kenji [1 ]
Morita, Mizuho [1 ]
Ohmi, Tadahiro [1 ]
机构
[1] Tohoku Univ, Sendai, Japan
关键词
3;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:451 / 454
相关论文
共 50 条
  • [21] SELECTIVE DEPOSITION OF DIAMOND CRYSTALS BY CHEMICAL VAPOR-DEPOSITION USING A TUNGSTEN-FILAMENT METHOD
    HIRABAYASHI, K
    TANIGUCHI, Y
    TAKAMATSU, O
    IKEDA, T
    IKOMA, K
    IWASAKIKURIHARA, N
    APPLIED PHYSICS LETTERS, 1988, 53 (19) : 1815 - 1817
  • [22] Chemical Vapor Deposition and Application of Graphene-Like Tungsten Disulfide
    You Yuncheng
    Zeng Tian
    Liu Jinsong
    Hu Tingsong
    Tai Guoan
    PROGRESS IN CHEMISTRY, 2015, 27 (11) : 1578 - 1590
  • [23] Modeling of tungsten thermal chemical vapor deposition
    Kim, Byunghoon
    Akiyama, Yasunobu
    Imaishi, Nobuyuki
    Park, Heung-Chul
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (5 A): : 2881 - 2887
  • [24] CHEMICAL VAPOR DEPOSITION OF TUNGSTEN AT LOW PRESSURE
    MILLER, A
    BARNETT, GD
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (10) : 973 - 976
  • [25] Modeling of tungsten thermal chemical vapor deposition
    Kim, B
    Akiyama, Y
    Imaishi, N
    Park, HC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (5A): : 2881 - 2887
  • [26] KINETICS OF CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN
    BRYANT, WA
    MEIER, GH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (04) : 559 - 565
  • [27] Tungsten Deposition by Metal-Chloride-Reduction Chemical Vapor Deposition
    Hirose, F.
    Watanabe, T.
    Shibata, A.
    Momiyama, K.
    Suzuki, T.
    Miya, H.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (07) : H251 - H253
  • [28] TUNGSTEN DEPOSITION BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION WITH ORGANOTUNGSTEN PRECURSORS
    SPEE, CIMA
    VERBEEK, F
    KRAAIJKAMP, JG
    LINDEN, JL
    RUTTEN, T
    DELHAYE, H
    VANDERZOUWEN, EA
    MEINEMA, HA
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 17 (1-3): : 108 - 111
  • [29] Control of selective tungsten chemical vapor deposition by monolayer nitridation of silicon surface
    Takami, S
    Saito, T
    Fujii, M
    Egashira, Y
    Komiyama, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (02) : L38 - L40
  • [30] CHARACTERIZATION OF ENCROACHMENT OF SELECTIVE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN AT THE EDGE OF CONTACTS
    COLGAN, EG
    GAMBINO, JP
    KASTL, RH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (01) : 159 - 166