Study of point defect clusters in high purity single crystals of silicon grown by Czochralski and float-zone methods by diffuse X-ray scattering technique

被引:0
|
作者
Natl Physical Lab, New Delhi, India [1 ]
机构
来源
J Cryst Growth | / 4卷 / 377-382期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [32] STUDY OF SEED-MELT INTERFACE IN CZOCHRALSKI GROWN KCL SINGLE-CRYSTALS BY X-RAY TOPOGRAPHY
    LAL, K
    MURTHY, RVA
    KUMAR, V
    SHARMA, SD
    HALDER, SK
    ACTA CRYSTALLOGRAPHICA SECTION A, 1984, 40 : C186 - C186
  • [33] Diffuse X-ray scattering studies on defect clusters in Ni irradiated by high-energy ions and electrons
    Yuya, H
    Matsui, T
    Shigematsu, H
    Maeta, H
    Ohtsuka, H
    Sugai, H
    Iwase, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 : 464 - 467
  • [34] HIGH-RESOLUTION DIFFUSE-X-RAY SCATTERING STUDY FROM NEARLY PERFECT SILICON SINGLE-CRYSTALS
    LAL, K
    SINGH, BP
    VERMA, AR
    ACTA CRYSTALLOGRAPHICA SECTION A, 1979, 35 (MAR): : 286 - 295
  • [35] Algorithms for solving atomic structures of nanodimensional clusters in single crystals based on X-ray and neutron diffuse scattering data
    Andrushevskij, N.M.
    Shchedrin, B.M.
    Simonov, V.I.
    Kristallografiya, 2004, 49 (05): : 952 - 959
  • [36] Algorithms for solving atomic structures of nanodimensional clusters in single crystals based on X-ray and neutron diffuse scattering data
    Andrushevskii, NM
    Shchedrin, BM
    Simonov, VL
    CRYSTALLOGRAPHY REPORTS, 2004, 49 (05) : 863 - 870
  • [37] Algorithms for solving atomic structures of nanodimensional clusters in single crystals based on X-ray and neutron diffuse scattering data
    N. M. Andrushevskii
    B. M. Shchedrin
    V. I. Simonov
    Crystallography Reports, 2004, 49 : 863 - 870
  • [38] X-ray investigation of the hydrostatic-compression effect upon the formation of oxygen clusters in silicon crystals, grown by the Czochralski method, at 1000 K
    Datsenko, L
    Misiuk, A
    Khrupa, V
    BakMisiuk, J
    Haertwig, J
    Domogala, J
    Surma, B
    METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 1997, 19 (05): : 15 - 20
  • [39] THE STUDY OF MICRODEFECTS IN GAAS SINGLE-CRYSTALS DOPED WITH SI BY X-RAY DIFFUSE-SCATTERING
    SHCHERBACHEV, KD
    BUBLIK, VT
    DARICHEVA, OE
    KRISTALLOGRAFIYA, 1995, 40 (05): : 868 - 876
  • [40] Study of the Stability of 3C-SiC Single Crystals Using High-Resolution Diffuse X-Ray Scattering
    Dompoint, D.
    Boulle, A.
    Galben-Sandulache, I. G.
    Chaussende, D.
    2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES, 2010, 1292 : 71 - +