SURFACE CHARGE COMPENSATION IN AN ION-ETCHED INSULATOR.

被引：0
|
作者：
Kanter, B.Z. [1 ]
Kozhukhov, A.V. [1 ]
机构：
[1] Acad of Sciences of the USSR,, Semiconductor Physics Inst,, Novosibirsk, USSR, Acad of Sciences of the USSR, Semiconductor Physics Inst, Novosibirsk, USSR
来源：
Instruments and experimental techniques New York | 1984年 / 27卷 / 4 pt 2期
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摘要：
5
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页码：937 / 939
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