共 29 条
- [21] Surface processes occurring on TiSi2 and CoSi2 in fluorine-based plasmas. Reactive ion etching in CF4/CHF3 plasmas JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (06): : 3005 - 3014
- [22] Si3N4 etch rates at various ion-incidence angles in high-density CF4, CHF3, and C2F6 plasmas Korean Journal of Chemical Engineering, 2020, 37 : 374 - 379
- [23] Ionization and fragmentation of CCl2F2, CClF3, CF4, and CHF3 by positron impact -: art. no. 052708 PHYSICAL REVIEW A, 2000, 62 (05): : 052708 - 052701
- [24] DISSOCIATIVE ATTACHMENT AND ION-PAIR FORMATION IN CF4, CHF3, CH2F2, AND CH3F UNDER LOW-ENERGY (0-20 EV) ELECTRON-IMPACT BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1982, 86 (04): : 321 - 326