Influence of the AlGaN buffer layer on the biaxial strain of GaN epilayers grown on 6H-SiC (0001) by molecular-beam epitaxy

被引：0
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作者：
Jeganathan, K. [1 ]
Shimizu, M. [1 ]
Okumura, H. [1 ]
机构：
[1] Power Electronics Research Center, Natl. Inst. Adv. Indust. Sci. T., Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
来源：
Journal of Applied Physics | 2005年 / 97卷 / 01期
关键词：
This work was supported by the R&D on High Frequency Nitride Semiconductor Device project from the Ministry of Economy; Trade and Industry (METI); Japan;
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摘要：
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