Mass transfer in heterogeneous materials under irradiation with high-intensity beams of charged particles

被引:0
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作者
Vershinin, G.A. [1 ]
Poletshenko, K.N. [1 ]
Povoroznjuk, S.N. [1 ]
Keb, V.V. [1 ]
Subocheva, T.V. [1 ]
机构
[1] Omsk State University, Omsk, Russia
关键词
Crystal impurities - Diffusion - Dislocations (crystals) - Grain boundaries - Ion beams - Ion implantation - Mass transfer - Parameter estimation - Secondary ion mass spectrometry - Semiconductor doping - Steel;
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摘要
The mass transfer in heterogeneous materials under irradiation with high-intensity beams of charged particles was discussed. The dislocation model of the grain boundary diffusion was applied for the description of the observable mass transfer in heterogeneous materials at the high-dose ion implantations. The density of dislocations and their spatial distributions depend upon the properties of the irradiated material, ions energy, irradiation dose and impurity concentration.
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页码:761 / 767
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