Mass transfer in heterogeneous materials under irradiation with high-intensity beams of charged particles

被引：0

作者：

Vershinin, G.A. ^{[1
]}

Poletshenko, K.N. ^{[1
]}

Povoroznjuk, S.N. ^{[1
]}

Keb, V.V. ^{[1
]}

Subocheva, T.V. ^{[1
]}

机构：

[1] Omsk State University, Omsk, Russia

来源：

Surface Investigation X-Ray, Synchrotron and Neutron Techniques | 2001年 / 16卷 / 05期

关键词：

Crystal impurities - Diffusion - Dislocations (crystals) - Grain boundaries - Ion beams - Ion implantation - Mass transfer - Parameter estimation - Secondary ion mass spectrometry - Semiconductor doping - Steel;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The mass transfer in heterogeneous materials under irradiation with high-intensity beams of charged particles was discussed. The dislocation model of the grain boundary diffusion was applied for the description of the observable mass transfer in heterogeneous materials at the high-dose ion implantations. The density of dislocations and their spatial distributions depend upon the properties of the irradiated material, ions energy, irradiation dose and impurity concentration.

引用

页码：761 / 767

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