RADIATION EFFECTS IN TaSix POLYSILICON MOS GATE STRUCTURES.

被引：0

作者：

Draper, Bruce L. ^{[1
]}

McKeon, Donald C. ^{[1
]}

机构：

[1] Sandia Natl Lab, Albuquerque, NM,, USA, Sandia Natl Lab, Albuquerque, NM, USA

来源：

| 1600年 / 02期

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摘要：

SEMICONDUCTOR DEVICES, MOS

引用

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IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (03) : 264 - 269
[42] Overlooked interfacial silicide-polysilicon gate resistance in MOS transistors
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