CONCENTRATION PROFILES AND ELECTRICAL PROPERTIES OF TANTALUM AND TITANIUM SILICIDES CONTACTS ON GaAs.

The effects of heat treatment up to 800 degree C on magnetron cosputter-deposited TiSi//2 and TaSi//2 films on GaAs were studied to determine the feasibility of using TiSi//2 and TaSi//2 as thermally stable Schottky contacts on GaAs MESFET'S. Current-Voltage data for corresponding TiSi//2/GaAs and TaSi//2/GaAs Schottky barrier diodes revealed electrical degradation of the contacts above 600 degree C. Chemical characterization of the films by RBS and AES techniques showed that such degradation could be caused by interdiffusion processes.