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- [3] High-quality SiO2/Si interface formation and its application to fabrication of low-temperature-processed polycrystalline Si thin-film transistor JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (6A): : 3646 - 3650
- [4] High-quality SiO2/Si interface formation and its application to fabrication of low-temperature-processed polycrystalline Si thin-film transistor Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (6 A): : 3646 - 3650