Direct growth of AlGaAs/GaAs single quantum wells on GaAs substrates cleaned by electron cyclotron resonance (ECR) hydrogen plasma

被引：0

作者：

Kondo, Naoto ^{[1
]}

Nanishi, Yasushi ^{[1
]}

Fujimoto, Masatomo ^{[1
]}

机构：

[1] NTT Opto-electronics Lab, Kanagawa, Japan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1994年 / 33卷 / 1 B期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[1] DIRECT GROWTH OF ALGAAS/GAAS SINGLE QUANTUM-WELLS ON GAAS SUBSTRATES CLEANED BY ELECTRON-CYCLOTRON-RESONANCE (ECR) HYDROGEN PLASMA
KONDO, N
NANISHI, Y
FUJIMOTO, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (1B): : L91 - L93
[2] PHOTOLUMINESCENCE STUDIES OF ALGAAS/GAAS SINGLE QUANTUM-WELLS GROWN ON GAAS SUBSTRATES CLEANED BY ELECTRON-CYCLOTRON-RESONANCE (ECR) HYDROGEN PLASMA
KONDO, N
NANISHI, Y
FUJIMOTO, M
[J]. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 : 819 - 820
[3] Electrical properties of AlGaAs/GaAs two-dimensional electron gases (2DEGs) grown on GaAs substrates cleaned by an electron cyclotron resonance (ECR) hydrogen plasma
NTT Opto-electronics Lab, Kanagawa, Japan
[J]. Jpn J Appl Phys Part 2 Letter, 11 B (L1494-L1497):
[4] Electrical properties of AlGaAs/GaAs two-dimensional electron gases (2DEGs) grown on GaAs substrates cleaned by an electron cyclotron resonance (ECR) hydrogen plasma
Kondo, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (11B): : L1494 - L1497
[5] ELECTRON-CYCLOTRON RESONANCE PLASMA-INDUCED DAMAGE IN ALGAAS/GAAS/ALGAAS SINGLE QUANTUM-WELLS
SWAMINATHAN, V
ASOM, MT
CHAKRABARTI, UK
PEARTON, SJ
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (12) : 1256 - 1258
[6] SURFACE CLEANING OF ALGAAS SUBSTRATES BY HYDROGEN ELECTRON-CYCLOTRON RESONANCE (ECR) PLASMA
KONDO, N
NANISHI, Y
FUJIMOTO, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (7B): : L913 - L915
[7] Characterization of an n-GaAs layer grown on a GaAs substrate cleaned by an electron cyclotron resonance hydrogen plasma
Takanashi, Y
Kondo, N
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (01): : 216 - 222
[8] Characterization of an n-GaAs layer grown on a GaAs substrate cleaned by an electron cyclotron resonance hydrogen plasma
Takanashi, Yoshifumi
Kondo, Naoto
[J]. Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1998, 16 (01):
[9] AlGaAs/GaAs and InGaAs/GaAs quantum wells grown on GaAs (111)A substrates
Watanabe, T
Yamamoto, T
Vaccaro, PO
Ohnishi, H
Fujita, K
[J]. MICROELECTRONICS JOURNAL, 1996, 27 (4-5) : 411 - 421
[10] Spectroscopic ellipsometric monitoring of electron cyclotron resonance plasma etching of GaAs and AlGaAs
[J]. J Vac Sci Technol B, 6 (2255):

← 1 2 3 4 5 →