VAPOR PHASE EQUILIBRIA OF ARSENIC-TRIOXIDE OVER GALLIUM ARSENIDE.

被引：0
|
作者：
Teramoto, Iwao [1 ]
Takagi, Hiromitsu [1 ]
Kano, Gota [1 ]
机构：
[1] Research Laboratory, Matsushita Electronics Corporation, Takatsuki, OK, Japan
来源：
| 1600年 / 18期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
15
引用
收藏
相关论文
共 50 条
  • [21] Initial stages of gallium arsenide metalorganic vapor phase epitaxy
    P. B. Boldyrevskii
    D. O. Filatov
    I. A. Kazantseva
    D. S. Smotrin
    M. V. Revin
    Inorganic Materials, 2016, 52 : 985 - 989
  • [22] Gallium arsenide and indium arsenide surfaces produced by metalorganic vapor-phase epitaxy
    Li, L
    Han, BK
    Law, D
    Begarney, M
    Hicks, RF
    JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) : 28 - 33
  • [23] Calculation of the Coefficients of Mutual Diffusion of the Growth Components during Gas-Phase Epitaxy of Gallium Arsenide.
    Gurchenok, G.A.
    Neorganiceskie materialy, 1980, 16 (12): : 2099 - 2102
  • [24] THE INFLUENCE OF PHOSPHORUS, ARSENIC AND ANTIMONY VAPOR AMBIENTS ON THE DIFFUSION OF ZINC INTO GALLIUM-ARSENIDE
    BOSKER, G
    HETTWER, HG
    RUCKI, A
    STOLWIJK, NA
    MEHRER, H
    JAGER, W
    URBAN, K
    MATERIALS CHEMISTRY AND PHYSICS, 1995, 42 (01) : 68 - 71
  • [25] LOW COMPENSATION VAPOR-PHASE EPITAXIAL GALLIUM-ARSENIDE
    COLTER, PC
    LOOK, DC
    REYNOLDS, DC
    APPLIED PHYSICS LETTERS, 1983, 43 (03) : 282 - 284
  • [26] THERMODYNAMICS OF SOLID SOLUTIONS-VAPOUR PHASE EQUILIBRIA IN INDIUM ARSENIDE-GALLIUM ARSENIDE SYSTEM
    KRESTOVN.AN
    VIGDOROV.VN
    UFIMTSEV, VB
    DOKLADY AKADEMII NAUK SSSR, 1968, 180 (04): : 869 - &
  • [27] Dynamic study of the surfaces of (001) gallium arsenide in metal-organic vapor-phase epitaxy during arsenic desorption
    Pristovsek, M
    Trepk, T
    Klein, M
    Zettler, JT
    Richter, W
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (03) : 1245 - 1250
  • [28] Dynamic study of the surfaces of (001) gallium arsenide in metal-organic vapor-phase epitaxy during arsenic desorption
    Pristovsek, M.
    Trepk, T.
    Klein, M.
    Zettler, J.-T.
    Richter, W.
    1600, American Institute of Physics Inc. (87):
  • [29] DEPENDENCE OF THE DIFFUSION-COEFFICIENT OF IRON IN GALLIUM-ARSENIDE ON THE VAPOR-PRESSURE OF ARSENIC
    KHLUDKOV, SS
    KORETSKII, AV
    INORGANIC MATERIALS, 1983, 19 (11) : 1578 - 1581
  • [30] SELECTIVE AREA GROWTH OF GALLIUM ARSENIDE BY METALORGANIC VAPOR PHASE EPITAXY.
    Ghosh, C.
    Layman, R.L.
    1600, (45):
12345