Comparison of static, switching and thermal behavior between a 1500 V silicon and silicon carbide bipolar diodes

被引：0
|
作者：
CEGELY - UPRESA CNRS, Villeurbanne, France [1 ]
机构：
来源：
Proc Int Semicond Conf CAS | / 195-198期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Thermal Fatigue Behavior of Silicon-Carbide-Doped Silver Microflake Sinter Joints for Die Attachment in Silicon/Silicon Carbide Power Devices
    Zhang, Hao
    Chen, Chuantong
    Nagao, Shijo
    Suganuma, Katsuaki
    JOURNAL OF ELECTRONIC MATERIALS, 2017, 46 (02) : 1055 - 1060
  • [32] Analytical Modeling of Switching Energy of Silicon Carbide Schottky Diodes as Functions of dIDS/dt and Temperature
    Jahdi, Saeed
    Alatise, Olayiwola
    Ran, Li
    Mawby, Philip
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2015, 30 (06) : 3345 - 3355
  • [33] The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs
    Jahdi, Saeed
    Alatise, Olayiwola
    Alexakis, Petros
    Ran, Li
    Mawby, Philip
    IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2015, 62 (01) : 163 - 171
  • [34] Investigation of the thermal properties of a linear array of laser diodes on a silicon carbide heat sink
    Apollonov, VV
    Babayants, GI
    Gruden, MN
    Derzhavin, SI
    Kazakov, AA
    Kishmakhov, BS
    Koval, YP
    Kuz'minov, VV
    Mashkovskii, DA
    Prokhorov, AM
    Smekalin, VP
    Timoshkin, VN
    QUANTUM ELECTRONICS, 1997, 27 (10) : 845 - 849
  • [35] THERMAL SHOCK BEHAVIOR AND FRACTURE ENERGY RELATION IN SILICON-CARBIDE
    COPPOLA, JA
    BRADT, RC
    AMERICAN CERAMIC SOCIETY BULLETIN, 1972, 51 (04): : 430 - &
  • [36] Degradation free fast switching 1200 V 50 A Silicon Carbide BJT's
    Lindgren, Anders
    Domeij, Martin
    2011 TWENTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC), 2011, : 1064 - 1070
  • [37] Fast switching 1200 V 50 A Silicon Carbide BJT's in boost converters
    Lindgren, Anders
    Domeij, Martin
    PROCEEDINGS OF THE 2011-14TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE 2011), 2011,
  • [38] COMPARISON OF THE SURFACE-CHARGE BEHAVIOR OF COMMERCIAL SILICON-NITRIDE AND SILICON-CARBIDE POWDERS
    WHITMAN, PK
    FEKE, DL
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1988, 71 (12) : 1086 - 1093
  • [39] Comparison of flexure creep behavior of silicon nitride between static and cyclic loading at elevated temperature
    Choi, Sung R.
    Salem, Jonathan A.
    Ceramic Engineering and Science Proceedings, 1994, 15 (05): : 589 - 596
  • [40] Comparison of the Reaction Behavior of Hexagonal Silicon Carbide Powder in Different Atmospheres
    Wang, Enhui
    Hou, Xinmei
    Chen, Junhong
    Chou, Kuo-Chih
    METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 2017, 48A (10): : 5122 - 5131
12345