Effect of Ionized Intrinsic Point Defects on the Carrier Concentration in Hg1 - xCdxTe.

被引：0
|
作者：
Lutsiv, R.V.
Petrov, P.P.
Rud', N.A.
Matviiv, M.V.
Sol'skii, I.M.
机构：
来源：
Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy | 1976年 / 12卷 / 05期
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暂无
中图分类号：
TM2 [电工材料]; TN [电子技术、通信技术];
学科分类号：
0805 ; 080502 ; 080801 ; 0809 ;
摘要：
Calculations are performed which show that the presence of ionized intrinsic point defects in Hg//1// minus //xCd//xTe affects the electron concentration in the temperature range from 77 to 300 degree K. It is also shown that the presence of such defects in Hg//1// minus //xCd//xTe shifts the intrinsic conductivity range toward higher temperatures.
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页码：830 / 834
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