Gettering of defects in silicon by porous silicon

被引：0
|
作者：
Huang, Yiping [1 ]
Zhu, Shiyang [1 ]
Bao, Zongming [1 ]
He, Yi [1 ]
Zhong, Huizhou [1 ]
Wu, Dongping [1 ]
机构：
[1] Fudan Univ, Shanghai, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1998年 / 19卷 / 12期
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页码：936 / 939
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