4H-SiC (112¯0) epitaxial growth

被引：0

作者：

Kimoto, T. ^{[1
]}

Yamamoto, T. ^{[1
]}

Chen, Z.Y. ^{[1
]}

Yano, H. ^{[1
]}

Matsunami, H. ^{[1
]}

机构：

[1] Dept. of Electron. Sci. and Eng., Kyoto University, Yoshidahonmachi, Sakyo, Kyoto, 606-8501, Japan

来源：

Materials Science Forum | 2000年 / 338卷

关键词：

Crystal lattices - Electron traps - Epitaxial growth - Morphology - Semiconducting films - Semiconductor doping - Substrates - Surface roughness - X ray crystallography;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Homoepitaxial growth on micropipe-free 4H-SiC(112¯0) substrates has been systematically investigated. In contrast to step-bunched surface on conventional off-axis (0001) epilayers, the (112¯0) epilayers exhibit very smooth morphology with a surface roughness of 0.18 nm. An X-ray diffraction analysis revealed that lattice-mismatch strain between n--epilayers and n+-substrates can be reduced by introducing n-type buffer layers. The lowest donor concentration of unintentionally doped epilayers is 1×1014 cm-3. Three electron traps located at Ec-0.27, 0.32, and 0.66 eV have been detected with a total trap concentration as low as 3.8×1012 cm-3.

引用

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