MOSFET, MANUFACTURED WITH SYNCHROTRON X-RAY LITHOGRAPHY.

被引：1

作者：

Hersener, J. ^{[1
]}

Laessing, G. ^{[1
]}

机构：

[1] AEG Research Cent, Ulm, West Ger, AEG Research Cent, Ulm, West Ger

来源：

Microelectronic Engineering | 1986年 / 5卷 / 1-4期

关键词：

ACCELERATORS - Storage Rings - SEMICONDUCTOR DEVICES; MOSFET; -; Manufacture; X-RAYS; Applications;

D O I：

10.1016/0167-9317(86)90036-5

中图分类号：

学科分类号：

摘要：

Using 'mix and match' technique of optical and X-ray lithography, the gate level of a MOSFET tetrode was fabricated. As an X-ray source the synchrotron radiation of the Berlin electron storage ring (BESSY) was used. The employed X-ray mask is based on a stress compensated Si membrane.

引用

页码：105 / 112

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