Exciton dynamics in homoepitaxial GaN

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作者：
Linkoping Univ, Linkoping, Sweden [1 ]
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Materials Science Forum | 1998年 / 264-268卷 / pt 2期
关键词：
Crystal defects - Excitons - Metallorganic chemical vapor deposition - Nitrides - Photoluminescence - Semiconductor doping;
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页码：1275 / 1278
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