Selective epitaxial growth on (100) vicinal GaAs surfaces by atmospheric pressure-metalorganic chemical vapor deposition using diethylgalliumchloride

被引：0

作者：

机构：

[1] Yamaguchi, Ko-ichi

[2] Okamoto, Kotaro

来源：

Yamaguchi, Ko-ichi | 1600年 / 30期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[31] Formation of macroscopic steps during selective area metalorganic chemical vapor deposition on GaAs (001) vicinal substrates
Shin, H
Kwon, YS
JOURNAL OF CRYSTAL GROWTH, 1997, 177 (1-2) : 33 - 40
[32] Adsorption and decomposition of organometallics on GaAs surfaces in low-pressure metalorganic chemical vapor deposition
Sato, Michio
Weyers, Markus
Japanese Journal of Applied Physics, Part 2: Letters, 1991, 30 (11 B):
[33] METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH AND CHARACTERIZATION OF GAAS
BLAAUW, C
MINER, C
EMMERSTORFER, B
SPRINGTHORPE, AJ
GALLANT, M
CANADIAN JOURNAL OF PHYSICS, 1985, 63 (06) : 664 - 669
[34] METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF ZNTE ON GAAS
TOMPA, GS
SUMMERS, CJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 903 - 906
[35] NATURAL SUPERSTEP FORMED ON GAAS VICINAL SURFACE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
FUKUI, T
SAITO, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (03): : L483 - L485
[36] GROWTH OF INSB ON GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
BIEFELD, RM
HEBNER, GA
JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) : 272 - 278
[37] A NOVEL METHOD OF SELECTIVE EPITAXIAL-GROWTH OF INP BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
WAKAHARA, A
PAK, K
YAMADA, H
YOSHIDA, A
NAKAMURA, T
JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) : 1284 - 1286
[38] Preparation and characterization of epitaxial MgO thin film by atmospheric-pressure metalorganic chemical vapor deposition
Zeng, JM
Wang, H
Shang, SX
Wang, Z
Wang, M
JOURNAL OF CRYSTAL GROWTH, 1996, 169 (03) : 474 - 479
[39] New approach to low-temperature epitaxial growth of GaAs by photostimulated metalorganic chemical vapor deposition
Kachi, Tetsu
Ito, Hiroshi
Terada, Shigeo
Japanese Journal of Applied Physics, Part 2: Letters, 1988, 27 (08):
[40] Growth of ZnSe/GaAs and ZnSe/Ge using atmospheric pressure metallorganic chemical vapor deposition
Abdel-Motaleb, IM
Pal, S
Desai, P
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2000, 3 (06) : 293 - 296

← 1 2 3 4 5 →