Thermodynamic analysis on MOVPE growth of Ga1-xInxP semiconductor

被引：0
|
作者：
机构：
[1] Li, Changrong
[2] Wang, Fuming
[3] Zhang, Weijing
来源：
Li, C. (crli@mater.ustb.edu.cn) | 1600年 / Elsevier Ltd卷 / 359期
关键词：
Number:; 863-715-010-0032; Acronym:; -; Sponsor:; 50071008; Sponsor: National Natural Science Foundation of China;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1 / 2
相关论文
共 50 条
  • [21] First principles valence band offset for Ga-interface in Ga1-xInxP/GaAs superlattice
    Agrawal, B. K.
    Agrawal, Savitri
    Srivastava, Rekha
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 33 (01): : 17 - 23
  • [22] An experimental study of the relaxation behavior of strained Ga1-xInxP layers grown on GaAs
    Schuler, O
    Wallart, X
    Mollot, F
    1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 615 - 618
  • [23] Ga1-xInxSb-MOVPE growth and thermodynamic model
    Kosíková, J
    Leitner, J
    Pangrác, J
    Melichar, K
    Jurek, K
    Drbohlav, I
    Stejskal, J
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (09) : 759 - 762
  • [24] Real-time thickness and compositional control of Ga1-xInxP growth using p-polarized reflectance
    Woods, V
    Dietz, N
    Ito, K
    Lauko, I
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (04): : 1190 - 1195
  • [25] COMPARATIVE-STUDY OF PHONON MODES IN GA1-XINXP AND GAASXP1-X ALLOYS
    GALTIER, P
    CHEVALLIER, J
    ZIGONE, M
    MARTINEZ, G
    PHYSICAL REVIEW B, 1984, 30 (02) : 726 - 733
  • [26] Pressure and doping dependent elastic and thermodynamical properties of Ga1-xInxP mixed valent compounds
    Varshney, Dinesh
    Dagaonkar, Geetanjali
    Varshney, Meenu
    MATERIALS RESEARCH BULLETIN, 2010, 45 (08) : 916 - 926
  • [27] Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy:: similarities and differences with the growth of strained arsenides
    Wallart, X
    Deresmes, D
    Mollot, F
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 255 - 259
  • [28] Indium surface segregation during chemical beam epitaxy of Ga1-xInxAs/GaAs and Ga1-xInxP/GaAs heterostructures
    Mesrine, M
    Massies, J
    Deparis, C
    Grandjean, N
    Vanelle, E
    Leroux, M
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 1242 - 1246
  • [29] PHOTOLUMINESCENCE AND ELECTRON-PARAMAGNETIC-RES SPECTRA OF FE-DOPED GA1-XINXP EPITAXIAL LAYERS
    POPOV, A
    BAHNEV, A
    DARDJONOV, S
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 108 (02): : 631 - 636
  • [30] Thermodynamic Analysis of Ga-As-Sb-C-H System and Design of MOVPE Process for Ga(As,Sb) Semiconductor
    李静波
    张维敬
    李长荣
    杜振民
    RareMetals, 1997, (04) : 10 - 14
12345