共 50 条
- [31] Electroluminescence from Si/CaF2 multilayers grown by molecular beam epitaxy PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1998, 165 (01): : 97 - 103
- [34] Annealing of CaF2 adlayers grown on Si(111):: investigations of the morphology by atomic force microscopy THIN FILMS EPITAXIAL GROWTH AND NANOSTRUCTURES, 1999, 79 : 120 - 123
- [35] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON CAF2/SI(111) SUBSTRATE JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1067 - 1070
- [36] MOLECULAR-BEAM EPITAXY OF INSULATOR METAL SILICON STRUCTURES - CAF2-NISI2/SI(111) AND CAF2/COSI2/SI(111) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 743 - 743
- [37] Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing CHINESE PHYSICS, 2007, 16 (03): : 795 - 798
- [40] HETEROEPITAXIAL GROWTH OF HIGH-QUALITY GAAS FILMS ON RAPID THERMAL ANNEALING PROCESSED CAF2/SI(511) STRUCTURES ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 291 - 296