CONTACT PROPERTIES OF TANTALUM-SILICON FILMS ON n- AND p-TYPE InP.

被引：0
|
作者：
Zhang, B.
Scott, D.M.
Wieder, H.H.
Lau, S.S.
Tseng, W.F.
机构：
[1] University of California, San Diego, CA 92093, United States
[2] Naval Research Laboratory, Washington, DC 20375, United States
来源：
| 1600年 / 55期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [11] Growth and properties of n- and p-type ZnO
    Litton, CW
    Look, DC
    Claflin, BB
    Reynolds, DC
    Cantwell, G
    Eason, DB
    Worley, RD
    2003 INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS: POST-CONFERENCE PROCEEDINGS, 2004, : 28 - 35
  • [12] Field emission properties of self-assembled silicon nanostructures on n- and p-type silicon
    Johnson, S
    Markwitz, A
    Rudolphi, M
    Baumann, H
    Oei, SP
    Teo, KBK
    Milne, WI
    APPLIED PHYSICS LETTERS, 2004, 85 (15) : 3277 - 3279
  • [13] n- and p-Type HgTe Quantum Dot Films
    Liu, Heng
    Keuleyan, Sean
    Guyot-Sionnest, Philippe
    JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (01): : 1344 - 1349
  • [14] Deep level defects in n- and p-type Fe implanted InP
    Bakry, AM
    Darweesh, S
    PHYSICA A, 1997, 242 (1-2): : 161 - 165
  • [15] FABRICATION OF HIGH-EFFICIENCY N + -P JUNCTION InP SOLAR CELLS BY USING GROUP VIB ELEMENT DIFFUSION INTO P-TYPE INP.
    Yamamoto, Akio
    Yamaguchi, Masafumi
    Uemura, Chikao
    IEEE Transactions on Electron Devices, 1985, ED-32 (12 pt II) : 2780 - 2786
  • [16] The diffusion of antimony in heavily doped and n- and p-type silicon
    Fair, R. B.
    Manda, M. L.
    Wortman, J. J.
    JOURNAL OF MATERIALS RESEARCH, 1986, 1 (05) : 705 - 711
  • [17] Recombination in n- and p-type silicon emitters contaminated with iron
    Macdonald, Daniel
    Mackel, Helmut
    Cuevas, Andres
    CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2, 2006, : 952 - 955
  • [18] Formation and thermoelectric properties of the n- and p-type silicon nanostructures with embedded GaSb nanocrystals
    Goroshko, Dmitrii L.
    Chusovitin, Evgeniy A.
    Subbotin, Evgeniy Y.
    Chusovitina, Svetlana V.
    Balagan, Semeyon A.
    Galkin, Konstantin N.
    Dotsenko, Sergey A.
    Gutakovskii, Anton K.
    Khovaylo, Vladimir V.
    Nazarov, Vladimir U.
    Galkin, Nikolay G.
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59
  • [19] Interface study of molybdenum oxide thin films on n- and p-type crystalline silicon surface
    Kumar, Abhishek
    Vandana
    Dutta, Mrinal
    Srivastava, S. K.
    Pathi, Prathap
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2024, 35 (07)
  • [20] Interface study of molybdenum oxide thin films on n- and p-type crystalline silicon surface
    Abhishek Kumar
    Mrinal Vandana
    S. K. Dutta
    Prathap Srivastava
    Journal of Materials Science: Materials in Electronics, 2024, 35
12345