CONTACT PROPERTIES OF TANTALUM-SILICON FILMS ON n- AND p-TYPE InP.

被引：0

作者：

Zhang, B.

Scott, D.M.

Wieder, H.H.

Lau, S.S.

Tseng, W.F.

机构：

[1] University of California, San Diego, CA 92093, United States

[2] Naval Research Laboratory, Washington, DC 20375, United States

来源：

| 1600年 / 55期

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[1] CONTACT PROPERTIES OF TANTALUM-SILICON FILMS ON N-TYPE AND P-TYPE INP
ZHANG, B
SCOTT, DM
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LAU, SS
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JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 2986 - 2989
[2] CHARACTERISTICS OF THE LUMINESCENCE POLARIZATION AND THE DEFORMATION POTENTIAL CONSTANTS OF n- AND p-TYPE InP.
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Soviet physics. Semiconductors, 1983, 17 (06): : 628 - 631
[3] Properties of iron silicide contacts to n- and p-type silicon
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[4] Epitaxial growth of n- and p-type ZnCdSe on InP
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[5] Electrical characteristics of tantalum and tantalum carbide Schottky diodes on n- and p-type silicon carbide as a function of temperature
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[6] ELECTRICAL CONTACT TO N- AND P-TYPE FERROELECTRIC OXIDES
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[7] PROPERTIES OF THE CONTACT ON ION CLEANED N-TYPE AND P-TYPE SILICON SURFACES
VIEUJOTTESTEMALE, E
PALAU, JM
ISMAIL, A
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SOLID-STATE ELECTRONICS, 1983, 26 (04) : 325 - 331
[8] Regularities of process of phase formation and electrical properties of tantalum-silicon thin films
Makogon, YN
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[9] PHOTOTHERMOELECTRIC EFFECTS IN SEMICONDUCTORS - N- AND P-TYPE SILICON
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JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) : 765 - &
[10] n- and p-type dopants for cubic silicon nitride
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