Second-harmonic generation in vertical-cavity surface-emitting laser

被引：0
|
作者：
Yamada, Norihide [1 ]
Ichimura, Yoshikatsu [1 ]
Nakagawa, Shigeru [1 ]
Kaneko, Yasuhisa [1 ]
Takeuchi, Tetsuya [1 ]
Mikoshiba, Nobuo [1 ]
机构：
[1] Hewlett Packard Lab, Kanagawa, Japan
来源：
| 1996年 / JJAP, Minato-ku, Japan卷 / 35期
关键词：
Applications; (APP); -; Experimental; (EXP);
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摘要：
A concept for a short-wavelength compact laser is proposed, in which second-harmonic coherent light is produced by converting fundamental light lased in a vertical-cavity surface-emitting laser. A layer is incorporated inside the laser cavity particularly for efficient second-harmonic generation. This layer consists of second-order optical nonlinear crystals which are preferably III-V- or II-VI-system compound semiconductors epitaxially grown with crystal orientation tilted from 〈100〉. Simulation indicates that the device will produce several hundred μW with AlAs/GaAs alternating layers for second-harmonic generation and an InGaAs active layer for lasing.
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