Change of electrical properties of Co-doped and Cr-doped FeSi2 thin films during amorphous-to-crystalline transformation

被引：0
|
作者：
Komabayashi, Masashi [1 ]
Ido, Shunji [1 ]
机构：
[1] Mitsubishi Materials Corp, Omiya, Japan
来源：
Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan | 1992年 / 100卷 / 1157期
关键词：
Electric Measurements - Resistance - Heat Treatment - Annealing - Iron Compounds - Thin Films - Semiconducting Films - Doping - Sputtering;
D O I：
10.2109/jcersj.100.22
中图分类号：
学科分类号：
摘要：
The annealing temperature dependences of the XRD pattern, Seebeck coefficient and electrical resistivity for Cr-doped and Co-doped FeSi2 thin films were studied. The films were deposited by rf-sputtering method. Below 380°C, the films were amorphous and their Seebeck coefficient and electrical resistivity were relatively low. The crystallization of FeSi2 occurred at 400° to 460°C. The Seebeck coefficient (in absolute value) and electrical resistivity steeply increased with increasing amount of FeSi2 crystals in the amorphous matrix. Above 460°C, the electrical resistivity of the films gradually decreased with rising annealing temperature. The results of activation energy measurement explained the observed decrease of the electrical resistivity in Cr-doped thin films as due to both the increase of the carrier density and to the decrease of the activation energy.
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页码：22 / 26
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