Isotopic tracing of Si during thermal growth of Si3N4 ultrathin films

被引：0
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作者：
Baumvol, I.J.R. [1 ]
Borucki, L. [1 ]
Chaumont, J. [1 ]
Ganem, J.-J. [1 ]
Kaytasov, O. [1 ]
Piel, N. [1 ]
Rigo, S. [1 ]
Schulte, W.H. [1 ]
Stedile, F.C. [1 ]
Trimaille, I. [1 ]
机构：
[1] Universidade Federal do Rio Grande, do Sul, Porto Alegre, Brazil
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1996年 / 118卷 / 1-4期
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页码：499 / 504
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