COMPENDIUM OF PURIFICATION FOR THE ELEMENTS USED TO PREPARE ORGANOMETALLIC COMPOUNDS FOR CHEMICAL VAPOUR DEPOSITION.

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作者
Vergnano, Laurie P.
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Chemtronics | 1986年 / 1卷 / 01期
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SEMICONDUCTOR MATERIALS - Chemical Vapor Deposition;
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摘要
During the process of metal-organic chemical vapor deposition (MOCVD), many different organometallic compounds are used. Epitaxial layers are produced giving compounds of the Periodic Table II-V, II-VI, III-V and IV-VI. To prepare the organometallic precursor in the state of high purity required for electronic devices it is necessary to start from very high purity elements and intermediates. The author concentrates on some elements and intermediates currently being used in MOCVD.
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