Spatially resolved investigations of the excitonic luminescence in GaN

被引：0
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作者：
Hoffmann, A. [1 ]
Christen, J. [1 ]
Siegle, H. [1 ]
Bertram, F. [1 ]
Schmidt, D. [1 ]
Eckey, L. [1 ]
Thomsen, C. [1 ]
Hiramatsu, K. [1 ]
机构：
[1] Technische Universitaet Berlin, Berlin, Germany
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1998年 / B50卷 / 1-3期
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页码：192 / 196
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