Application of laser technology in molecular beam epitaxy (MBE)

被引：0
|
作者：
Hebei Univ, Baoding, China [1 ]
机构：
来源：
Jiguang Yu Hongwai | / 4卷 / 228-230期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Molecular beam epitaxy (MBE) in situ high-temperature annealing of HgCdTe
    He, L
    Wang, SL
    Yang, JR
    Yu, MF
    Wu, Y
    Chen, XQ
    Fang, WZ
    Qiao, YM
    Gui, YS
    Chu, JH
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 524 - 529
  • [32] Combinatorial laser molecular beam epitaxy (MBE) growth of Mg-Zn-O alloy for band gap engineering
    Matsumoto, Y
    Murakami, M
    Jin, ZW
    Ohtomo, A
    Lippmaa, M
    Kawasaki, M
    Koinuma, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (6AB): : L603 - L605
  • [33] Molecular beam epitaxy (MBE) growth of composite (In,Al)As/(In,Ga)As vertically coupled quantum dots and their application in injection lasers
    Kovsh, AR
    Zhukov, AE
    Egorov, AY
    Ustinov, VM
    Shernyakov, YM
    Maximov, MV
    Volovik, VV
    Tsatsul'nikov, AF
    Musikhin, YV
    Ledentsov, NN
    Kop'ev, PS
    Bimberg, D
    Alferov, ZI
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 1117 - 1120
  • [34] Molecular beam epitaxy (MBE) growth of composite (In,Al)As/(In,Ga)As vertically coupled quantum dots and their application in injection lasers
    A.F. Ioffe Phys.-Technical Institute, Russ. Acad. Sci., 26 P., Petersburg, Russia
    不详
    J Cryst Growth, (1117-1120):
  • [35] CWGaN laser diodes grown by molecular beam epitaxy
    Hitz, B
    PHOTONICS SPECTRA, 2005, 39 (09) : 26 - 27
  • [36] LASER IONIZATION AIDS MOLECULAR-BEAM EPITAXY
    LYTLE, D
    PHOTONICS SPECTRA, 1994, 28 (05) : 50 - 50
  • [37] InGaN laser diodes grown by molecular beam epitaxy
    Burgess, DS
    PHOTONICS SPECTRA, 2005, 39 (03) : 24 - +
  • [38] Growth of AlInAs/GaInAs MODFET structures on InP substrates by molecular beam epitaxy(MBE)
    Wu, YB
    Chen, H
    Shang, YH
    SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 1348 - 1351
  • [39] THE ELECTRICAL-PROPERTIES OF DOPED SILICON, GROWN BY MOLECULAR-BEAM-EPITAXY (MBE)
    KUBIAK, RAA
    NEWSTEAD, SM
    LEONG, WY
    HOUGHTON, R
    PARKER, EHC
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 42 (03): : 197 - 200
  • [40] SUBSTRATE ROTATION-INDUCED COMPOSITIONAL OSCILLATION IN MOLECULAR-BEAM EPITAXY (MBE)
    ALAVI, K
    PETROFF, PM
    WAGNER, WR
    CHO, AY
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 146 - 148
12345