Improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy

被引：0
|
作者：
Wang, Hailong [1 ]
Zhu, Haijun [1 ]
Ning, Dong [1 ]
Wang, Hui [1 ]
Wang, Xiaodong [1 ]
Guo, Zhongsheng [1 ]
Feng, Songlin [1 ]
机构：
[1] Inst of Semiconductors, Chinese Acad of Sciences, Beijing, China
来源：
Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves | 2000年 / 19卷 / 03期
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摘要：
11
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页码：191 / 193
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