Characteristics of GaAs Schottky in-plane gate quantum wire transistors for switching of quantized conductance

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作者：
Okada, Hiroshi [1 ]
Hasegawa, Hideki [1 ]
机构：
[1] Res. Ctr. Interface Quant. E., Hokkaido Univ., Kita-13, N., Sapporo, Japan
来源：
Physica B: Condensed Matter | 1999年 / 272卷 / 01期
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页码：123 / 126
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